InGaAs Avalanche Photodiode 2.5 Gbps, Back-Illuminated(chip)

Product Code (Ordering Information): PDAB0055-C

InGaAs Avalanche Photodiode 2.5 Gbps, Back-Illuminated(chipInGaAs Avalanche Photodiode 2.5 Gbps, Back-Illuminated(chip


  • G-PON / Ge-PON
  • Long Haul Receivers
  • SONET/SDH Receivers


  • Planer Structure for High Reliability
  • 1000 to 1625nm Spectral Response
  • Low Dark Current


Go!Foton’s Avalanche Photodiode (APD), Back-Illumination type is suitable for 2.5 Gbps applications in optical communications.  This InGaAs APD has a planer structure for high reliability.


Electro-Optical Characteristics

Parameter Min. Typ. Max. Conditions
Active Area Diameter (μm)   55    
Responsivity (A/W) 0.80     1.55μm, M=1
Dark Current (nA)     50 0.9V , 25OC
Breakdwon Voltage (V) 35   60 10μA
Capacitance (pF)     0.7 1MHz, M=10
Frequency Response (GHz) 1.5     M=8, RL=50
Operating Voltage (V)   Vbr-1   M=10
Punch-through Voltage (V) 15   Vbr-10 See below
Temperature Coefficient of Vb (%/OC) 0.1 0.15    
1) Condition unless noted; 25OC, Pout =1uW
2) Punch-through voltage is defined as voltage where 1.5V above the voltage where the first deviation of IV curve under illumination shos local maximum.
3) Responsivity at punch-through voltage is defined as responsivity at M=1

Absolute Maximum Rating

Parameter Min. Typ. Max.
Reverse Current (mA)     1
Forard Current (mA)     2
Maximum Input Poer (mW)     1
Operating Temperature4) (OC) 0   +85
Storage Temperature4) (OC) -40   +85
4) Operational or storage beyond these absolute maximum ratings cause permanent damage to the device.


InGaAs Avalanche Photodiode 2.5 Gbps, Back-Illuminated(chip


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