 InGaAs Avalanche Photodiode (APD) 10 Gbps(Chip)
Product Code (Ordering Information): PDAB0022-C
Applications:
- Long Haul Receivers
- SONET/SDH Receivers
Features:
- Ceramic sub-carrier
- Planer Structure for High Reliability
- 1000 to 1625nm Spectral Response
- Low Dark Current
Description:
Go!Foton’s Avalanche Photodiode (APD) is suitable for 10 Gbps applications in optical communications. This InGaAs APD has a planer structure for high reliability. The optical signal goes through the aperture for a back illuminated structure.
Schematic:
Specifications:
Electro-Optical Characteristics
| Parameter |
Min. |
Typ. |
Max. |
Conditions |
| Active Area Diameter (μm) |
|
22 |
|
|
| Responsivity (A/W) |
0.80 |
|
|
1.55μm, M=1 |
| Dark Current (nA) |
|
|
50 |
0.9V , 25OC |
| Breakdwon Voltage (V) |
|
|
35 |
10μA |
| Capacitance (pF) |
|
|
0.7 |
1MHz, M=10 |
| Frequency Response (GHz) |
7 |
|
|
M=8, RL=50 |
| Operating Voltage (V) |
|
|
|
M=10 |
| Punch-through Voltage (V) |
15 |
|
Vbr-10 |
See below |
| Temperature Coefficient of Vb (%/OC) |
|
0.15 |
|
|
| 1) Condition unless noted; 25OC, Poutt =1uW |
| 2) Punch-through voltage is defined as voltage where 1.5V above the voltage where the first deviation of IV curve under illumination shos local maximum. |
| 3) Responsivity at punch-through voltage is defined as responsivity at M=1 |
Absolute Maximum Rating
| Parameter |
Min. |
Typ. |
Max. |
| Reverse Current (mA) |
|
|
1 |
| Forard Current (mA) |
|
|
1 |
| Maximum Input Poer (mW) |
|
|
0.5 |
| Operating Temperature4) (OC) |
0 |
|
+85 |
| Storage Temperature4) (OC) |
-40 |
|
+85 |
| 4) Operational or storage beyond these absolute maximum ratings cause permanent damage to the device. |
Dimension:
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